Extraction of series resistance and mobility degradation parameter in short channel MOSFET Transistor using iterative method

Noureddine Maouhoub, Khalid Rais

Abstract


Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOS field effect transistors transistor. Accurate extraction of these parameters has a most importance in modeling and simulation of MOSFET devices. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. The principle of this method is based on the exponential model of effective mobility and the experimental by solving a system of two equations using the least squares methods, these two equations allows us to calculate analytically the series resistance and the mobility at low field respectively as function of the mobility degradation parameter. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device with channel length L = 0.1µm have shown a best agreement with measurements data at strong inversion and the extracted parameters are compared with those published previously using the same device and the same exponential model of effective mobility. Furthermore, the advantage of the exponential model of effective mobility is that allows us to extract the surface roughness amplitude.


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DOI: https://doi.org/10.11591/APTIKOM.J.CSIT.158

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This work is licensed under a Creative Commons Attribution 4.0 International License.